MOSIS PARAMETRIC TEST RESULTS RUN: T3AZ (LO_EPI) VENDOR: TSMC TECHNOLOGY: SCN018 FEATURE SIZE: 0.18 microns INTRODUCTION: This report contains the lot average results obtained by MOSIS from measurements of MOSIS test structures on each wafer of this fabrication lot. SPICE parameters obtained from similar measurements on a selected wafer are also attached. COMMENTS: DSCN6M018_TSMC TRANSISTOR PARAMETERS W/L N-CHANNEL P-CHANNEL UNITS MINIMUM 0.27/0.18 Vth 0.51 -0.53 volts SHORT 20.0/0.18 Idss 564 -277 uA/um Vth 0.53 -0.53 volts Vpt 4.6 -5.4 volts WIDE 20.0/0.18 Ids0 15.4 -8.6 pA/um LARGE 50/50 Vth 0.43 -0.42 volts Vjbkd 3.1 -4.0 volts Ijlk <50.0 <50.0 pA Gamma 0.53 0.62 V^0.5 K' (Uo*Cox/2) 167.4 -35.6 uA/V^2 Low-field Mobility 397.53 84.54 cm^2/V*s COMMENTS: Poly bias varies with design technology. To account for mask bias use the appropriate value for the parameters XL and XW in your SPICE model card. Design Technology XL (um) XW (um) ----------------- ------- ------ SCN6M_DEEP (lambda=0.09) 0.00 -0.01 thick oxide 0.00 -0.01 SCN6M_SUBM (lambda=0.10) -0.02 0.00 thick oxide -0.02 0.00 FOX TRANSISTORS GATE N+ACTIVE P+ACTIVE UNITS Vth Poly >6.6 <-6.6 volts PROCESS PARAMETERS N+ P+ POLY PLY+BLK MTL1 MTL2 N+BLK UNITS Sheet Resistance 6.7 7.7 7.9 325.7 0.08 0.08 61.3 ohms/sq Contact Resistance 10.4 11.1 9.8 4.96 ohms Gate Oxide Thickness 41 angstrom PROCESS PARAMETERS MTL3 MTL4 MTL5 MTL6 POLY_HRI N_W UNITS Sheet Resistance 0.08 0.07 0.07 0.03 1947.0 952 ohms/sq Contact Resistance 9.57 14.31 18.87 21.40 ohms COMMENTS: BLK is silicide block. CAPACITANCE PARAMETERS N+ P+ POLY M1 M2 M3 M4 M5 M6 N_W UNITS Area (substrate) 986 1134 98 38 19 13 8 8 3 72 aF/um^2 Area (N+active) 8388 53 20 14 11 9 8 aF/um^2 Area (P+active) 8190 aF/um^2 Area (poly) 63 17 10 7 6 4 aF/um^2 Area (metal1) 38 15 9 7 5 aF/um^2 Area (metal2) 41 15 9 6 aF/um^2 Area (metal3) 39 15 9 aF/um^2 Area (metal4) 40 14 aF/um^2 Area (metal5) 36 aF/um^2 Area (no well) 145 aF/um^2 Fringe (substrate) 248 208 14 59 53 42 24 -- aF/um Fringe (poly) 68 37 28 23 20 17 aF/um Fringe (metal1) 58 35 22 19 aF/um Fringe (metal2) 54 35 28 23 aF/um Fringe (metal3) 51 35 28 aF/um Fringe (metal4) 55 36 aF/um Fringe (metal5) 54 aF/um Overlap (N+active) 791 aF/um Overlap (P+active) 674 aF/um CIRCUIT PARAMETERS UNITS Inverters K Vinv 1.0 0.76 volts Vinv 1.5 0.80 volts Vol (100 uA) 2.0 0.08 volts Voh (100 uA) 2.0 1.64 volts Vinv 2.0 0.83 volts Gain 2.0 -23.20 Ring Oscillator Freq. D1024_THK (31-stg,3.3V) 331.96 MHz DIV1024 (31-stg,1.8V) 394.13 MHz Ring Oscillator Power D1024_THK (31-stg,3.3V) 0.07 uW/MHz/gate DIV1024 (31-stg,1.8V) 0.02 uW/MHz/gate COMMENTS: DEEP_SUBMICRON T3AZ SPICE BSIM3 VERSION 3.1 PARAMETERS SPICE 3f5 Level 8, Star-HSPICE Level 49, UTMOST Level 8 * DATE: Dec 11/03 * LOT: T3AZ WAF: 2002 * Temperature_parameters=Default .MODEL CMOSN NMOS ( LEVEL = 49 +VERSION = 3.1 TNOM = 27 TOX = 4.1E-9 +XJ = 1E-7 NCH = 2.3549E17 VTH0 = 0.3760617 +K1 = 0.5943076 K2 = 1.67355E-3 K3 = 1E-3 +K3B = 3.682806 W0 = 1E-7 NLX = 1.767881E-7 +DVT0W = 0 DVT1W = 0 DVT2W = 0 +DVT0 = 1.2316239 DVT1 = 0.3512305 DVT2 = 0.063951 +U0 = 263.9980419 UA = -1.394217E-9 UB = 2.297709E-18 +UC = 5.130071E-11 VSAT = 1.029403E5 A0 = 1.8766173 +AGS = 0.4102712 B0 = -2.37567E-9 B1 = -1E-7 +KETA = -4.974094E-3 A1 = 4.008889E-5 A2 = 0.8813901 +RDSW = 105 PRWG = 0.5 PRWB = -0.2 +WR = 1 WINT = 0 LINT = 1.344769E-8 +XL = 0 XW = -1E-8 DWG = -1.143937E-8 +DWB = 9.970084E-9 VOFF = -0.0929211 NFACTOR = 2.2595064 +CIT = 0 CDSC = 2.4E-4 CDSCD = 0 +CDSCB = 0 ETA0 = 3.074988E-3 ETAB = 6.426614E-5 +DSUB = 0.0125687 PCLM = 0.7841044 PDIBLC1 = 0.1991955 +PDIBLC2 = 1.733639E-3 PDIBLCB = -0.1 DROUT = 0.7514474 +PSCBE1 = 2.556879E9 PSCBE2 = 4.835696E-9 PVAG = 0.0194376 +DELTA = 0.01 RSH = 6.7 MOBMOD = 1 +PRT = 0 UTE = -1.5 KT1 = -0.11 +KT1L = 0 KT2 = 0.022 UA1 = 4.31E-9 +UB1 = -7.61E-18 UC1 = -5.6E-11 AT = 3.3E4 +WL = 0 WLN = 1 WW = 0 +WWN = 1 WWL = 0 LL = 0 +LLN = 1 LW = 0 LWN = 1 +LWL = 0 CAPMOD = 2 XPART = 0.5 +CGDO = 7.91E-10 CGSO = 7.91E-10 CGBO = 1E-12 +CJ = 9.844556E-4 PB = 0.8 MJ = 0.3815244 +CJSW = 2.398346E-10 PBSW = 0.8 MJSW = 0.1086216 +CJSWG = 3.3E-10 PBSWG = 0.8 MJSWG = 0.1086216 +CF = 0 PVTH0 = -1.728579E-4 PRDSW = -3.5480489 +PK2 = 6.801178E-4 WKETA = 3.767259E-3 LKETA = -0.010533 +PU0 = 29.3769437 PUA = 1.243843E-10 PUB = 1.106551E-24 +PVSAT = 1.561162E3 PETA0 = 1.003159E-4 PKETA = -4.59777E-3 ) * .MODEL CMOSP PMOS ( LEVEL = 49 +VERSION = 3.1 TNOM = 27 TOX = 4.1E-9 +XJ = 1E-7 NCH = 4.1589E17 VTH0 = -0.3964517 +K1 = 0.5761282 K2 = 0.0297723 K3 = 0 +K3B = 12.3187913 W0 = 1E-6 NLX = 1.196154E-7 +DVT0W = 0 DVT1W = 0 DVT2W = 0 +DVT0 = 0.5577732 DVT1 = 0.2280785 DVT2 = 0.1 +U0 = 113.2991718 UA = 1.447999E-9 UB = 1.104406E-21 +UC = -1E-10 VSAT = 2E5 A0 = 1.7671819 +AGS = 0.3717386 B0 = 5.244054E-7 B1 = 1.662339E-6 +KETA = 0.0183286 A1 = 0.5158713 A2 = 0.3003242 +RDSW = 231.4041994 PRWG = 0.5 PRWB = -0.0757768 +WR = 1 WINT = 0 LINT = 2.914319E-8 +XL = 0 XW = -1E-8 DWG = -3.938221E-8 +DWB = 2.191036E-9 VOFF = -0.0972893 NFACTOR = 1.9153815 +CIT = 0 CDSC = 2.4E-4 CDSCD = 0 +CDSCB = 0 ETA0 = 0.1273129 ETAB = -0.1052622 +DSUB = 1.1690285 PCLM = 2.4250376 PDIBLC1 = 3.841774E-5 +PDIBLC2 = 0.023628 PDIBLCB = 3.028389E-4 DROUT = 9.779722E-4 +PSCBE1 = 8.821785E9 PSCBE2 = 2.547938E-9 PVAG = 14.940381 +DELTA = 0.01 RSH = 7.7 MOBMOD = 1 +PRT = 0 UTE = -1.5 KT1 = -0.11 +KT1L = 0 KT2 = 0.022 UA1 = 4.31E-9 +UB1 = -7.61E-18 UC1 = -5.6E-11 AT = 3.3E4 +WL = 0 WLN = 1 WW = 0 +WWN = 1 WWL = 0 LL = 0 +LLN = 1 LW = 0 LWN = 1 +LWL = 0 CAPMOD = 2 XPART = 0.5 +CGDO = 6.74E-10 CGSO = 6.74E-10 CGBO = 1E-12 +CJ = 1.145407E-3 PB = 0.8773649 MJ = 0.4171443 +CJSW = 2.057813E-10 PBSW = 0.8580886 MJSW = 0.3893066 +CJSWG = 4.22E-10 PBSWG = 0.8580886 MJSWG = 0.3893066 +CF = 0 PVTH0 = 1.660651E-3 PRDSW = 2.7643111 +PK2 = 1.811786E-3 WKETA = 0.0360518 LKETA = -3.020314E-3 +PU0 = -0.9809526 PUA = -4.76658E-11 PUB = 1E-21 +PVSAT = -50 PETA0 = 1E-4 PKETA = -4.721583E-3 ) *